Selective wet etch process for cmos ics having embedded strain inducing regions and integrated circuits therefrom

ABSTRACT

A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes providing a substrate having a semiconductor surface including PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate stack including a gate electrode layer is formed on a gate dielectric layer in or on both the PMOS regions and the NMOS regions. An n-type doping is used to create n-type wet etch sensitized regions on opposing sides of the gate stack in both the PMOS and said NMOS regions. Wet etching removes the n-type wet etch sensitized regions in (i) at least a portion of said PMOS regions to form a plurality of PMOS source/drain recesses or (ii) in at least a portion of said NMOS regions to form a plurality of NMOS source/drain recesses, or (i) and (ii). At least one of a compressive strain inducing epitaxial layer is formed in the plurality of PMOS source/drain recesses and a tensile strain inducing epitaxial layer is formed in the plurality of NMOS source/drain recesses. The fabrication of the IC is then completed.

FIELD

Embodiments of the present invention relate to methods for fabrication of integrated circuits, in particular, to integrated CMOS integrated circuits having embedded strain inducing regions for PMOS and/or NMOS devices.

BACKGROUND

It is known device performance can be improved by adding compressive stress to PMOS devices and tensile stress to NMOS devices. For example, embedded epitaxial SiGe in PMOS source and drain (S/D) regions has become mainstream for PMOS devices in CMOS technology since its implementation around the 90 nm node. Embedded epitaxial SiC in NMOS source and drain (S/D) regions also became mainstream for NMOS devices at around the 45 nm node.

Regarding compressively stressed PMOS devices, the conventional process to incorporate epitaxial S/D compressive stress inducing species (e.g. SiGe) for PMOS devices in CMOS flows usually involves patterning and selective dry etch of the PMOS S/D regions. The extra pattern step is to allow selective substrate (e.g. silicon) etch of the PMOS S/D regions which results in additional cycle time and manufacturing cost. In addition, because the final PMOS transistor performance depends on the shape of the substrate recess formed, plasma dry etch has difficulty in controlling that shape due to lithographic effects such as gate electrode (e.g. poly) pitch dependence and the proximity effect. To form tensile stressed NMOS devices conventional processing analogous to the above described processing for forming compressively stressed PMOS devices is generally used. Accordingly, there is a need for new methods to fabricate CMOS integrated circuits (ICs) having compressive stressed PMOS devices and/or tensile stressed NMOS devices, and CMOS ICs therefrom.

SUMMARY

This Summary is provided to comply with 37 C.F.R. §1.73, presenting a summary of the invention to briefly indicate the nature and substance of the invention. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Embodiments of the present invention describe wet-etch based methods for fabricating a CMOS integrated circuit (IC) comprising devices having embedded epitaxial strain inducing regions. A substrate is provided having a semiconductor surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate stack comprising a gate electrode layer on a gate dielectric layer is formed in or on both the PMOS regions and the NMOS regions. An n-type doping step creates n-type wet etch sensitized regions on opposing sides of the gate stack in both PMOS and NMOS regions. The n-type doping in one embodiment comprises a simultaneously blanket implant that without a masking pattern simultaneously dopes both the PMOS and NMOS S/D regions.

Wet etching is then used to remove at least a portion of (i) the n-type wet etch sensitized regions in at least a portion of the PMOS regions to form a plurality of PMOS source/drain recesses or (ii) n-type wet etch sensitized regions in at least a portion of said NMOS regions to form a plurality of NMOS source/drain recesses or (i) and (ii). The wet etching can comprises an aqueous solution comprising at least one metal hydroxide, such as NH₄OH.

A compressive strain inducing epitaxial layer (e.g. SiGe for PMOS devices) is formed in the plurality of PMOS source/drain recesses and/or a tensile strain inducing epitaxial layer (e.g. SiC for NMOS devices) is formed in the plurality of NMOS source/drain recesses. The fabrication of the IC is then completed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart showing steps in a simplified process flow for forming CMOS ICs comprising PMOS devices having an epitaxial compressive stress layer in the S/D regions of at least a portion of the PMOS devices, according to a first embodiment of the invention.

FIG. 2A-E are cross sectional depictions of intermediate structures for several steps of the process flow described relative to FIG. 1.

FIG. 3 is a flow chart for a simplified process flow for forming CMOS ICs comprising PMOS devices having an epitaxial compressive stress layer in the S/D regions of at least a portion of the PMOS devices and NMOS devices having a tensile stress layer in the S/D regions of at least a portion of the NMOS devices, according to a second embodiment of the invention.

FIG. 4 shows a MOS transistor including an exemplary S/D dopant profile prior to wet recess etch and the resulting 2D cross section of the S/D regions after wet recess etch and epitaxial layer deposition in the recesses showing an exemplary shape of the curved interface formed between the epitaxial stress layer and the substrate portion of the S/D region, according to an embodiment of the invention.

FIG. 5 shows a cross sectional depiction of an integrated circuit (IC) according to an embodiment of the invention including a compressively stressed PMOS device and a tensile stressed NMOS device.

DETAILED DESCRIPTION

The present invention is described with reference to the attached figures, wherein like reference numerals are used throughout the figures to designate similar or equivalent elements. The figures are not drawn to scale and they are provided merely to illustrate the instant invention. Several aspects of the invention are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide a full understanding of the invention. One having ordinary skill in the relevant art, however, will readily recognize that the invention can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operations are not shown in detail to avoid obscuring the invention. The present invention is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the present invention.

Referring to FIG. 1, a flow chart showing steps in a simplified process flow 100 for forming CMOS ICs comprising PMOS devices having an embedded epitaxial compressive stress layer in the S/D regions in at least a portion of the PMOS devices, according to a first embodiment of the invention, is shown. Step 101 comprises providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions (e.g. n-) for PMOS devices and NMOS regions (p-) for NMOS devices. The substrate can be a conventional bulk silicon substrate, a silicon on insulator (SOI) substrate, or other suitable substrate.

Step 102 comprises forming a gate dielectric layer on both PMOS (e.g. n-) and NMOS (e.g. p-) regions. The gate dielectric can be thermally grown (e.g. silicon oxide) or be a deposited gate dielectric, such as a high-k dielectric. The high-k dielectric generally has a k-value >10. Exemplary high-k dielectrics can include hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.

A gate dielectric anneal can be performed in situ with the gate dielectric formation (step 102), or can comprise a separate step. Step 103 comprises forming a gate electrode layer on the gate dielectric layer. The gate electrode layer can comprise polysilicon, a metal silicide, or other electrically conductive layer. The metal silicide can comprise, for example, tungsten silicide, cobalt silicide, tantalum silicide, titanium silicide, nickel silicide, or platinum nickel silicide. Step 104 comprises defining the gate electrode layer to form a plurality of gate stacks over the NMOS and PMOS regions for the NMOS and PMOS devices, respectively.

Step 105 comprises depositing a hard mask (HM) layer, such as silicon nitride (SiN), silicon oxynitride (SiON) or silicon carbide (SiC)) along with an optional inorganic antireflective coating (IARC) on the gate electrode. First spacer processing can follow step 105.

Step 106 comprises n-type doping to n-type dope the S/D regions on opposing sides of the gate stacks n-type to form n-type wet etch sensitized regions in both the PMOS and NMOS S/D regions. The doping achieves at least a moderate n-type doping level, such as >1×10¹⁷ cm⁻³. The step 106 doping in one embodiment comprises a simultaneous blanket (i.e. where no masking level is used) implant that simultaneously dopes the S/D regions for both PMOS and NMOS devices. However, in another embodiment of the invention, separate implants are used to form n-type wet etch sensitized regions in the PMOS and NMOS S/D regions. The separate implant embodiment allows different implant parameters to be used (e.g. dose, energy, implant angle) for the PMOS and NMOS S/D regions. The step 106 blanket implant in one embodiment is at a high enough dose (e.g. >1×10¹⁵ cm⁻²) to provide sufficient doping levels (e.g. ≧1×10²⁰ cm⁻³ alone for the NMOS S/D regions so that no additional S/D implant step (patterning and implant) is generally required. The blanket n-type doping step is generally performed using phosphorous, arsenic or antimony. Step 107 comprises implant activation.

Step 108 comprises depositing a HM layer, such as SiN, SiON, or SiC. Step 109 comprises patterning to expose the PMOS S/D semiconductor surface for the PMOS transistors to receive an embedded epitaxial compressive strain layer, while protecting the NMOS devices. In one embodiment, a portion of the PMOS devices (e.g. peripheral devices) are protected and are thus not exposed at step 109 and as a result do not get etched at step 110 to form recesses and thus do not receive the epitaxial compressive stress inducing layer at step 111 described below. In another embodiment, all PMOS devices are exposed at step 109 and thus get etched at step 110 to form recesses and receive the epitaxial compressive stress inducing layer at step 111.

Step 110 comprises removing the n-type wet etch sensitized PMOS S/D regions exposed during step 109 to form recesses using wet processing, wherein the recess etch is highly selective to etch n-type doped semiconducting (e.g. Si) having at least a moderate doping level (e.g. ≧1×10¹⁷ cm⁻³), while preserving undoped (e.g. a polysilicon gate), p-doped semiconducting regions, lightly doped n-regions (e.g. <10¹⁶ cm⁻³), and dielectric layers such as the gate dielectric and the first spacer. The wet etch can provide at least a 200:1 selectivity for an n-type semiconductor having a moderate doping level (e.g. ≧1×10¹⁷ cm⁻³) relative to an undoped polysilicon gate, p-doped semiconducting regions, lightly doped n-region, and typical first spacer and gate dielectric layers. This etch generally removes most of the n-type doping in the PMOS S/D regions, up to a dopant concentration determined by the doping distribution present in the PMOS S/D regions at step 110, which as known in the art can generally be well controlled through selection of ion implantation and annealing parameters. The recess etch follows the doping profile in the substrate, generally stopping at a particular threshold doping concentration level, such as, for example, ≧1×10¹⁷ cm⁻³, ≧5×10¹⁷ cm⁻³, ≧1×10¹⁸ cm⁻³, ≧5×10¹⁸ cm⁻³, ≧1×10¹⁹ cm⁻³, or ≧5×10¹⁹ cm⁻³.

The wet etch can comprises an aqueous basic etch solution. The etch solution can comprise a hydroxide. The hydroxide can comprise a metal hydroxide, and in one embodiment a non-alkali metal comprising hydroxide, such as NH₄OH or an organic non-alkali metal comprising hydroxide such as tetramethylammonium hydroxide (TMAH). The hydroxide can also comprise an alkali hydroxide comprising a group IA (except H) or group IIA metal. However, alkali hydroxide etching unlike non-alkali hydroxide etching, generally adds a subsequent step to remove the alkali metal. In one embodiment of the invention the etch solution can comprise a 1:20 to 1:1,000 hydroxide in water solution, with a typical etch solution being a 1:50 solution. Very dilute solutions (e.g. around 1:200 to 1:1,000) are still generally effective, although the etch rate is generally low, thus generally significantly adding to the processing time. In one particular embodiment, the etch solution comprises a 1:20 to 1:200 NH₄OH:DI water solution. Unless noted otherwise, all liquid ratios used herein refer to concentrated solutions. NH₄OH and most other hydroxides generally do not attack most photoresists.

Step 111 comprises epitaxial growth of a compressive stress inducing layer in the recesses. The epitaxial growth can include in-situ doping (P+ for PMOS) in one embodiment. In the case of a Si substrate, the compressive stress inducing epitaxial layer can be SiGe or SiGeC where C is at a low concentration (e.g. <1 at. %). Step 112 comprises removing the HM layer that is deposited in step 105. A second spacer can be formed after step 112. Step 113 comprises removing the HM layer, such as a IARC/HM stack on the gate electrode layer. Step 114 comprises PMOS S/D patterning. Step 115 comprises PMOS S/D doping, such as P+ patterning and P+ implantation. However, if step 111 comprises in situ doping, steps 114 and 115 may be optional.

Step 116 comprises an optional NMOS S/D patterning and step 117 NMOS S/D doping, such as N+ implanting. Steps 116 and 117 are generally performed if the blanket implant dose at step 106 is <1×10¹⁵ cm⁻², and in some embodiments are still performed even if the blanket implant dose at step 106 is >1×10¹⁵ cm⁻². Step 118 comprises completing fabrication of the IC generally including silicide formation on the S/D regions and the gate electrode layer in the case of a polysilicon gate, multi-layer metal processing and other back end of the line (BEOL) processing. The processing can also include replacement gate processing.

FIG. 2A-E are cross sectional depictions of intermediate structures for several steps of the process steps for flow 100 described relative to FIG. 1. FIG. 2A corresponds to the cross sectional depiction present during blanket implant step 106 described in FIG. 1. Note that no patterning layer is present and that the blanket implant shown results in simultaneous implantation on opposing sides of the gate stack in the S/D regions for both the PMOS and the NMOS device shown. The HM layer (e.g. silicon nitride) is shown as 121, and trench isolation as 122. NMOS region 130 includes a gate electrode 131 on a gate dielectric (not shown), with a first spacer 134 on the sidewalls of the gate stack. PMOS region 140 includes a gate electrode 137 on a gate dielectric (not shown), with the first spacer 134 on the sidewalls of the gate stack.

FIG. 2B corresponds to the cross sectional depiction after HM layer deposition 108, while FIG. 2C shows the cross sectional depiction after HM layer patterning step 109 and etch of the HM layer 124 over the PMOS region 140. The patterning layer 147 in one embodiment comprises photoresist and in another embodiment comprises a HM material. FIG. 2D corresponds to the cross sectional depiction after the epitaxial growth of the embedded compressive strain layer 153 in the recesses in the PMOS region 140 formed during step 110 described relative to FIG. 1. FIG. 2E corresponds to P+ implanting the PMOS region 140 at step 115 described relative to FIG. 1. A masking layer 163 is shown protecting the NMOS region 130 from the P+ implant. As described above, HM layer 121 is removed before P+ implanting. A second spacer 168 is also shown in FIG. 2E.

FIG. 3 is a simplified process flow 300 for forming CMOS ICs comprising PMOS devices having an epitaxial compressive stress layer in the S/D regions of at least a portion of the PMOS devices and NMOS devices having a tensile stress layer in the S/D regions of at least a portion of the NMOS devices, according to a second embodiment of the invention. Steps 101-113 described in flow 100 relative to FIG. 1 are included in flow 300 and are renumbered as steps 301-313, respectively. Step 314 comprises tensile stress defining HM layer deposition. Step 315 comprises patterning to expose at least a portion of the NMOS S/D semiconductor surface. Step 316 comprises wet etch removal of the n-type wet etch sensitized regions in the exposed NMOS S/D semiconductor surface to form recesses. Step 316 can use the same chemistry described above relative to step 110 in flow 100. Step 317 comprises epitaxial growth of a tensile stress inducing layer in the recesses in the NMOS regions. In the case of a Si substrate, the tensile stress inducing epitaxial layer can be SiC, or SiGeC where Ge is at a low concentration (e.g. <1 at. %).

Step 318 comprises removing the HM layer deposited at step 314. Step 319 comprises the optional step of a second spacer formation to result in final sidewall formation. Step 320 comprises removal of the HM layer on the gate electrode, typically IARC/HM layer on the gate electrode. Steps 321 and 322 are the optional steps of NMOS S/D patterning and step NMOS S/D doping, respectively, analogous to steps 116 and 117. Steps 323 and 324 comprise PMOS S/D patterning and PMOS S/D doping, respectively.

Numerous variations will be clear to one having ordinary skill in the art. For example, the order of the NMOS and PMOS S/D patterning and doping can be reversed. Moreover, the tensile stress inducing layer formation can precede the compressive stress inducing layer.

FIG. 4 shows a MOS transistor 400 including an exemplary S/D dopant profile prior to wet recess etch and the resulting 2D cross section of the S/D regions after wet recess etch and epitaxial layer deposition in the recesses showing an exemplary shape of the curved interface formed between the epitaxial stress layer and the substrate portion of the S/D region, according to an embodiment of the invention. The gate electrode layer is shown as 421, the gate dielectric layer as 422, and the spacer as 434. As described above, the shape of the curved interface 419 is determined by the wet recess etch which removes the n-type doping in S/D regions having at least a minimum doping concentration, such as the exemplary doping concentration of 1×10¹⁹ cm⁻³ shown in FIG. 4 that defines curved interface 419. Thus, the doping concentration along the curved interface 419 between the epitaxial strain inducing layer 415 and the semiconductor surface layer 425 along a majority of the length and generally the entire length of the curved interface 419 has an n-type doping concentration that is at least 1×10¹⁷ cm⁻³ and varies no more than ±10% from an average doping concentration along the entire length. The n-type doping concentration is seen to decrease at least one order of magnitude within a short distance (e.g. 0.5 μm) beneath the curved interface 419, such as into the 10¹⁷ range as shown in FIG. 4.

The curved interface 419 shown in FIG. 4 and curved interfaces according to embodiments of the invention also have several other characteristic identifying features. Specifically, the shape of curved interface 419 is distinguishable from interfaces formed by conventional plasma etching or which result in cleaved randomly angled edges. In contrast, curved interfaces according to embodiments of the invention are generally exclusive of cleaved randomly angled edges. Moreover, the shape of the curved interface 419 is not isotropic as it would be from a conventional wet etch since the shape of the curve interface 419 follows the n-type dopant profile, which is generally substantially non-isotropic. As described above, the doping distribution present at the recess etch step can be well controlled through selection of ion implantation and annealing parameters.

FIG. 5 shows a cross sectional depiction of an integrated circuit (IC) 500 according to an embodiment of the invention including a compressively stressed PMOS device 270 and a tensile stressed NMOS device 280, shown for an optional replacement gate process. The IC comprises a substrate 512, wherein the surface of the substrate 512 includes PMOS regions 522 (e.g. n-) for PMOS devices such as PMOS 270 and NMOS regions 528 (e.g. p-) for NMOS devices such as NMOS device 280. Trench isolation 563 shown provides isolation between PMOS device 270 and NMOS device 280.

PMOS device 270 has a gate stack comprising a patterned metal comprising gate stack comprising gate electrode filler material 574/metal replacement gate 272 over high-k gate dielectric layer 251, while NMOS device 280 has a gate stack comprising a patterned metal comprising gate electrode layer stack comprising gate electrode filler material 283/metal replacement gate 281 over high-k gate dielectric layer 251. Spacers 291 are shown on the sidewalls of the respective gate stacks. PMOS device 270 includes a S/D comprising compressive strain inducing epitaxial portion 540(a) and substrate surface portion 540(b) having an LDD 541 on opposing sides of the gate stack. NMOS device 280 includes a S/D comprising tensile strain inducing epitaxial portion 546(a) and substrate surface portion 546(b) having an LDD 545 on opposing sides of the gate stack.

Embodiments of the invention generally provide several significant advantages. As described above, embodiments of the invention are distinguishable as compared to conventional embedded epitaxial layer (e.g. SiGe) process flows by at least three (3) features. The n-type S/D implant is moved to occur before the embedded epitaxial layer (e.g. SiGe or SiGe and SiC) processing. The n-type S/D implant is a blanket implant that is performed without a masking layer and thus implants the S/D regions of both the NMOS and PMOS devices. In addition, the recesses are formed using a wet etch, such as using hydroxide-based wet chemistry, rather than conventional plasma dry etch processing.

Advantages of embodiments of the invention include lower cost and improved manufacturability since at least one masking level is eliminated. Moreover, transistor performance is generally improved, particularly for PMOS devices, since PMOS transistor behavior is sensitive to substrate (e.g. Si) recess etch shape. Using n-type implants such as N+ implants in one embodiment, the wet recess etch has a high selectivity because it generally follows the dopant profile which can be designed by choice of implant and annealing parameters which allows more precise control of recess formation. Moreover, wet recess etching has less gate electrode (e.g. polysilicon) pitch and proximity dependence as compared to dry etch processing.

Embodiments of the invention can be integrated into a variety of process flows to form a variety of devices and related products. The semiconductor substrates may include various elements therein and/or layers thereon. These can include barrier layers, other dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc. Moreover, the invention can be used in a variety of processes including bipolar, CMOS, BiCMOS and MEMS.

While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the invention. Thus, the breadth and scope of the present invention should not be limited by any of the above described embodiments. Rather, the scope of the invention should be defined in accordance with the following claims and their equivalents.

Although the invention has been illustrated and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art upon the reading and understanding of this specification and the annexed drawings. In addition, while a particular feature of the invention may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, to the extent that the terms “including”, “includes”, “having”, “has”, “with”, or variants thereof are used in either the detailed description and/or the claims, such terms are intended to be inclusive in a manner similar to the term “comprising.”

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The Abstract of the Disclosure is provided to comply with 37 C.F.R. §1.72(b), requiring an abstract that will allow the reader to quickly ascertain the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the following claims. 

1. A method for fabricating a CMOS integrated circuit (IC) comprising devices having embedded epitaxial strain inducing regions, comprising: providing a substrate having a semiconductor surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices; forming a gate stack comprising a gate electrode layer on a gate dielectric layer in or on both said PMOS regions and said NMOS regions; n-type doping to create n-type wet etch sensitized regions on opposing sides of said gate stack in both said PMOS and said NMOS regions; wet etching to remove said n-type wet etch sensitized regions in (i) at least a portion of said PMOS regions to form a plurality of PMOS source/drain recesses or (ii) in at least a portion of said NMOS regions to form a plurality of NMOS source/drain recesses, or said (i) and (ii); forming at least one of a compressive strain inducing epitaxial layer in said plurality of PMOS source/drain recesses and a tensile strain inducing epitaxial layer in said plurality of NMOS source/drain recesses, and completing fabrication of said IC.
 2. The method of claim 1, wherein said n-type doping comprises simultaneously blanket implanting said PMOS and said NMOS regions.
 3. The method of claim 2, wherein simultaneous blanket implanting comprises implanting an n-type specie at a dose of at least 1×10¹³ cm⁻².
 4. The method of claim 2, wherein simultaneous blanket implanting comprises implanting an n-type specie at a dose of at least 1×10¹⁵ cm⁻².
 5. The method of claim 3, wherein said n-type specie comprises P, As or Sb.
 6. The method of claim 1, wherein said wet etching comprises an aqueous solution comprising at least one metal hydroxide.
 7. The method of claim 6, wherein said metal hydroxide comprises a non-alkali metal hydroxide.
 8. The method of claim 7, wherein said non-alkali metal hydroxide comprises NH₄OH.
 9. The method of claim 8, wherein said wet etch solution comprises 1:20 to 1:200 of said NH₄OH in DI water.
 10. The method of claim 1, wherein wet etching removes said (i) portion of said n-type wet etch sensitized regions in said PMOS regions to form said plurality of PMOS source/drain recesses, and said forming comprises forming said compressive strain inducing epitaxial layer in said plurality of PMOS source/drain recesses.
 11. The method of claim 1, wherein wet etching removes (ii) said portion of said n-type wet etch sensitized regions in said NMOS regions to form said plurality of NMOS source/drain recesses, and said forming comprises forming said tensile strain inducing epitaxial layer in said plurality of NMOS source/drain recesses.
 12. The method of claim 1, wherein said wet etching comprises a first wet etch step and a second wet etch step and said forming comprises a first forming step and a second forming step, and wherein said first wet etch step is followed by said first forming step, said second wet etch step follows said first forming step and said and said second forming follows said second wet etch step, further wherein: said first wet etch step removes said (i) portion of said n-type wet etch sensitized regions in said PMOS regions to form said plurality of PMOS source/drain recesses, and said first forming step comprises forming said compressive stress inducing epitaxial layer in said plurality of PMOS source/drain recesses, and said second wet etch step removes said (ii) portion of said n-type wet etch sensitized regions in said NMOS regions to form said plurality of NMOS source/drain recesses, and said first forming step comprises forming said tensile strain inducing epitaxial layer in said plurality of NMOS source/drain recesses.
 13. The method of claim 1, wherein said wet etching comprises a first wet etch step and a second wet etch step and said forming comprises a first forming step and a second forming step, and wherein said first wet etch step is followed by said first forming step, said second wet etch step follows said first forming step and said and said second forming follows said second wet etch step, further wherein: said first wet etch step removes said (ii) portion of said n-type wet etch sensitized regions in said NMOS regions to form said plurality of NMOS source/drain recesses, and said first forming step comprises forming said tensile strain inducing epitaxial layer in said plurality of NMOS source/drain recesses, and said second wet etch step removes said (i) portion of said n-type wet etch sensitized regions in said PMOS regions to form said plurality of PMOS source/drain recesses, and said second forming step comprises forming said compressive stress inducing epitaxial layer in said plurality of PMOS source/drain recesses.
 14. The method of claim 1, wherein said compressive strain inducing epitaxial layer comprises SiGe and said tensile strain inducing epitaxial layer comprises SiC.
 15. A method for fabricating a CMOS integrated circuit (IC) comprising devices having embedded epitaxial strain inducing regions, comprising: providing a substrate having a Si comprising surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices; forming a gate stack comprising a gate electrode layer on a gate dielectric layer in or on both said PMOS regions and said NMOS regions; simultaneously blanket implanting a dose of at least 1×10¹³ cm⁻² of at least one n-type wet etch sensitizing specie selected from P and As to create n-type wet etch sensitized regions in both said PMOS regions and said NMOS regions on opposing sides of said gate stack; wet etching comprises an aqueous solution comprising at least one non-alkali metal hydroxide to remove said n-type wet etch sensitized regions in at least a portion of said PMOS regions to form a plurality of PMOS source/drain recesses; forming a compressive strain inducing epitaxial layer comprising SiGe in said plurality of PMOS source/drain recesses, and completing fabrication of said IC.
 16. The method of claim 15, wherein said dose is at least 1×10¹⁵ cm⁻².
 17. The method of claim 15, wherein said non-alkali metal hydroxide comprises NH₄OH and said wet etch solution comprises 1:20 to 1:200 of said NH₄OH in DI water.
 18. An integrated circuit (IC), comprising: a substrate having a semiconductor surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices; a gate stack comprising a gate electrode layer on a gate dielectric layer on both said PMOS regions and said NMOS regions; source and drain regions on opposite sides of said gate stack for said PMOS devices and said NMOS devices, wherein said source and drain regions for at least a portion of said PMOS devices comprise an embedded compressive strain inducing epitaxial layer which forms a curved interface with said semiconductor surface, said semiconductor surface along an entire length of said curved interface exclusive of cleaved randomly angled edges having a n-type doping concentration that is at least 1×10¹⁷ cm⁻³ and varies no more than ±10% from an average doping concentration along at least a majority of said entire length, further wherein said n-type doping concentration decreases at least one order of magnitude within a distance of 0.5 μm beneath said curved interface.
 19. The IC of claim 18, wherein said source and drain regions for at least a portion of said NMOS devices comprise an embedded tensile strain inducing epitaxial layer which forms said curved interface exclusive of cleaved randomly angled edges with said semiconductor surface.
 20. The IC of claim 19, wherein said compressive strain inducing epitaxial layer for said portion of said PMOS devices comprises SiGe and said embedded tensile strain inducing epitaxial layer for said portion of said NMOS devices comprises SiC.
 21. The IC of claim 18, wherein said n-type doping concentration is at least 1×10¹⁹ cm⁻³. 